XXR High-Efficiency solar cell ultra-high conversion efficiency G12-20BB Series Heterojunction (HJT) Solar Cell

Production Description

Production Name：G12-20BB HJT Solar Cell

Wafer type: N-type monocrystalline silicon wafer

Size: 210 * 105mm ± 0.15mm

Thickness: 120 ± 15μm

Max. Power of Half Piece: 5.51W

Voltage at the Max. Power Point：0.672V

Current at the Max. Power Point：8.216A

Max. Efficiency: 25.0%

Higher Cell Conversion Efficiency --Average conversion efficiency higherthan 25%

Higher Power Output -  Power gains 10% more than the conventional solar cells

Bifaciality - Up to 95% bifaciality

Zero Degradation - No PiD and LID effect

Lower Temperature Coefficient - -0.26% Low temperature coefficient

Front busbars (silver) 20 *0.04 mm with padding point; Blue Transparent Conductive Oxide (TCO) Film

Back Busbars (silver) 20 0.04mm with padding point;  Blue Transparent Conductive Oxide (TCO) Film

in the new generation of high-efficiency solar cells, HJT technology lead a new round in PV technology. With a single hybrid structure integrating the advantages of crystaline siicon and amorphous sicon thin film technology HJT solar cell has the advantages of high eficiency and stablity with a low-temperature and simplified manufacturing proceduresExtremely low temperature coeficient so as to avoid lD and PlD effect, There is no color diference between the front and back sidethe bifaciality is more than 95%. The backside has an obvious advantage in power generation, which ensures a stable and high eficiencypower output reaardlessof seasonal circulation and climate change.